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BAS385
Vishay Semiconductors
Small Signal Schottky Diode
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Models
Available
MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13" reel (8 mm tape), 10K/box TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES • Integrated protection ring against static
discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Applications where a very low forward voltage is required
PARTS TABLE
PART
TYPE DIFFERENTIATION
BAS385
VR = 30 V
ORDERING CODE BAS385-TR3 or BAS385-TR
CIRCUIT CONFIGURATION Single
REMARKS Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Average forward current
tp = 10 ms tp ≤ 1 s
VRWM = 25 V
VR IFSM IFRM
IF IFAV
VALUE 30 5 300 200 200
UNIT V A mA mA mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction to ambient air
On PC board 50 mm x 50 mm x 1.6 mm
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
VALUE 320 125
-65 to +150
UNIT K/W °C °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Reserve current Diode capacitance
IF = 0.1mA
VF
IF = 1 mA
VF
IF = 10 mA
VF
IF = 30 mA
VF
IF = 100 mA
VF
VR = 25 V, tp = 300 μs
IR
VR = 1 V, f = 1 MHz
CD
TYP.
MAX. 240 320 400 500 800 2.3 10
UNIT mV mV mV mV mV μA pF
Rev. 2.2, 02-Jun-17
1
Document Number: 85504
For technical questions within your region:
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BAS385
Vishay Semiconductors
P - Reverse Power Dissipation (mW) R
200
180
VR = 30 V
160
140 RthJA = 540 kW
120 100
PR - Limit at 100 % VR
80
60
PR - Limit
at 80 % VR 40
20
0
25
50
75
100
125
150
15822
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
1000
100
VR = VRRM
CD - Diode Capacitance (pF)
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15825
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
0.71
1.3
1.27
0.152
0.355
10
25 10
9.9
IR - Reverse Current (µA)
IF - Forward Current (mA)
1
25
50
75
100
125
150
15823
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000 100 10
Tj = 125 °C Tj = 25 °C
1
0.1
0
0.5
1.0
1.5
15824
VF - Forward Voltage (V)
Fig. 3 - Forward Curre.