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BAS385 Dataheets PDF



Part Number BAS385
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Small Signal Schottky Diode
Datasheet BAS385 DatasheetBAS385 Datasheet (PDF)

www.vishay.com BAS385 Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13" reel (8 mm tape), 10K/box TR/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance pl.

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www.vishay.com BAS385 Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13" reel (8 mm tape), 10K/box TR/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required PARTS TABLE PART TYPE DIFFERENTIATION BAS385 VR = 30 V ORDERING CODE BAS385-TR3 or BAS385-TR CIRCUIT CONFIGURATION Single REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Average forward current tp = 10 ms tp ≤ 1 s VRWM = 25 V VR IFSM IFRM IF IFAV VALUE 30 5 300 200 200 UNIT V A mA mA mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA Junction temperature Tj Storage temperature range Tstg VALUE 320 125 -65 to +150 UNIT K/W °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Forward voltage Reserve current Diode capacitance IF = 0.1mA VF IF = 1 mA VF IF = 10 mA VF IF = 30 mA VF IF = 100 mA VF VR = 25 V, tp = 300 μs IR VR = 1 V, f = 1 MHz CD TYP. MAX. 240 320 400 500 800 2.3 10 UNIT mV mV mV mV mV μA pF Rev. 2.2, 02-Jun-17 1 Document Number: 85504 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) BAS385 Vishay Semiconductors P - Reverse Power Dissipation (mW) R 200 180 VR = 30 V 160 140 RthJA = 540 kW 120 100 PR - Limit at 100 % VR 80 60 PR - Limit at 80 % VR 40 20 0 25 50 75 100 125 150 15822 Tj - Junction Temperature (°C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 1000 100 VR = VRRM CD - Diode Capacitance (pF) 10 9 f = 1 MHz 8 7 6 5 4 3 2 1 0 0.1 1 10 100 15825 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage 0.71 1.3 1.27 0.152 0.355 10 25 10 9.9 IR - Reverse Current (µA) IF - Forward Current (mA) 1 25 50 75 100 125 150 15823 Tj - Junction Temperature (°C) Fig. 2 - Reverse Current vs. Junction Temperature 1000 100 10 Tj = 125 °C Tj = 25 °C 1 0.1 0 0.5 1.0 1.5 15824 VF - Forward Voltage (V) Fig. 3 - Forward Curre.


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