BAS40L

DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode FEATURES Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) Boardspace 1.17 mm2 (approx. 10% of SOT23) Power dissipation comparable to SOT23. Bottom view MDB391 BAS40L DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a SOD882 leadless ultra small plastic package. handbook, halfpage APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Mobile communication, digital (still) cameras, PDAs and PCMCIA cards. Fig.1 Simplified outline (SOD882) and symbol. Marking code: S6. The marking bar indicates the cathode. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1s; δ ≤ 0.5 tp < 10 ms − − − − −65 − 40 120 120 200 +150 150 V mA mA mA °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 2003 May 20 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous f...