BAS45A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS45A Low-leakage diode Product specification Supersedes data of June 1994 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode FEATURES Continuous reverse voltage: max. 125 V Repetitive peak forward current: max. 625 mA Low reverse current: max. 1 nA Switching time: typ. 1.5 µs. APPLICATION Low leakage current applications. k handbook, halfpage a BAS45A DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. MAM156 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board without metallization pad. total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − −65 − 4 1 0.5 300 +175 175 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 125 125 250 625 V V mA mA UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Low-leakage diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF =...