BAS52-02V

BAS52... Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Parameter Diode reverse voltage Forward current Package SC79 Configuration single Symbol VR IF IFSM IFAV Ptot Tj Tstg Symbol RthJS Marking y Value 45 750 2000 500 500 150 -65 ... 150 Value Unit K/W mW °C Unit V mA Maximum Ratings at TA = 25°C, unless otherwise specified Surge forward current (t = 100µs) Average forward current (50/60Hz, sinus) Total power dissipation TS
110°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For
60 calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-04-2002 BAS52... Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Reverse current IR VR = 45 V VR = 5 V, T A = 70 °C VR = 10 V VR = 10 V, TA = 85 °C Forward voltage I F = 10 mA I F = 100 mA I F = 200 mA VF 400 335 430 500 420 530 600 10 30 1 80 mV Unit µA AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 5 10 pF 2 Nov-04-2002 BAS52... Reverse current IR =  (TA ) VR = Parameter 10 -3 A 10 -4 Reverse current IR = (VR) TA = Parameter 10 -3 A 125°C 10 -4 85°C 10 -5 10 -5 IR 10 -6 VR=10V IR 10 -6 25°C 10 -7 VR=5V 10 -7 10 -8 10 -8 -40°C 10 -9 10 -9 10 -10 -5...