BAS56

BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits „ High switching speed: trr ≤ 6 ns „ Reverse voltage: VR ≤ 60 V „ Repetitive peak reverse voltage: VRRM ≤ 60 V „ Repetitive peak forward current: IFRM ≤ 600 mA „ AEC-Q101 qualified „ Small SMD plastic package 1.3 Applications „ High-speed switching in e.g. surface-mounted circuits 1.4 Quick reference data Table 1. Symbol IF IR VR trr Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time Conditions VR = 60 V Min Typ Max [1][2] - - 200 - - 100 - - 60 [3] - - 6 [1] Single diode loaded. [2] Device mounted on an FR4 Printed-Circuit Board (PCB). [3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA. Unit mA nA V ns NXP Semiconductors BAS56 High-speed double diode 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description cathode (diode 1) cathode (diode 2) anode (diode 2) anode (diode 1) Simplified outline Graphic symbol 43 43 12 12 006aab100 3. Ordering information Table 3. Ordering information Type number Package Name Description BAS56 - plastic surface-mounted package; 4 leads 4. Marking Table 4. Marking codes Type number BAS56 [1] * = -: made in Hong Kong...