BAS56

BAS56 DUAL HIGH CURRENT SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. SOT-143 CASE MAXIMUM RATINGS (TA=25oC) The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg ΘJA 60 60 200 600 4000 1000 350 -65 to +150 357 UNITS V V mA mA mA mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL IR IR IR VF VF VF CT trr Qs VFR VFR TEST CONDITIONS MIN VR=60V VR=60V, TA=150oC VR=75V IF=10mA IF=200mA IF=500mA VR=0, f=1 MHz IF=IR=400mA, RL=100Ω, Rec. to 40mA IF=10mA, VR=5.0V, RL=500Ω IF=400mA, tr=30ns IF=400mA, tr=100ns MAX 100 100 10 0.75 1.00 1.25 2.5 6.0 50 1.2 1.5 UNITS nA µA µA V V V pF ns pC V V 60 All dimensions in inches (mm). LEAD CODE: 1) ANODE 1 2) ANODE 2 3) CATHODE 2 4) CATHODE 1 R2 61 ...