BAS78D

BAS78A...BAS78D Silicon Switching Diodes
Switching applications
High breakdown voltage 4 3 2 1 2, 4 1 EHA00004 VPS05163 Type BAS78A BAS78B BAS78C BAS78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking BAS 78A BAS 78B BAS 78C BAS 78D 1=A 1=A 1=A 1=A Pin Configuration 2=C 2=C 2=C 2=C 3 = n.c. 4 = C 3 = n.c. 4 = C 3 = n.c. 4 = C 3 = n.c. 4 = C Package SOT223 SOT223 SOT223 SOT223 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAS 78A 50 50 BAS 78B 100 100 1 1 10 1.2 BAS 78C 200 200 BAS 78D 400 400 Unit V A Surge forward current, t = 1
s Total power dissipation , TS = 124 °C Junction temperature Storage temperature W °C 150 -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS
22 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BAS78A...BAS78D Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA BAS78A BAS78B BAS78C BAS78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100
, measured at IR = 200mA trr 1 CD 10 - Unit max. V typ. V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 - µA pF µs Test circuit for reverse recovery time DUT tr 10% tp t ΙF t rr t ΙF Oscillograph 90% VR ...