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BAS79B Dataheets PDF



Part Number BAS79B
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Datasheet BAS79B DatasheetBAS79B Datasheet (PDF)

Silicon Switching Diodes BAS 79 A … BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 114.

  BAS79B   BAS79B



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Silicon Switching Diodes BAS 79 A … BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 114 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 – 65 … + 150 200 200 Unit BAS 79 D 400 400 A V VR VRM IF IFM IFS Ptot Tj Tstg 50 50 W ˚C Rth JA Rth JS ≤ ≤ 170 30 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 79 A … BAS 79 D Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR = VR max, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for reverse recovery time CD trr – – 10 1 – – pF µs Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Vp = VR + IF × Rj Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BAS 79 A … BAS 79 D Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Reverse current IR = f (TA) VCE = 10 V Semiconductor Group 3 .


BAS79A BAS79B BAS79B


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