Silicon Switching Diodes
BAS79A...BAS79D
Silicon Switching Diodes
Switching applications High breakdown voltage Common cathode
4
3 2
2, 4...
Description
BAS79A...BAS79D
Silicon Switching Diodes
Switching applications High breakdown voltage Common cathode
4
3 2
2, 4 1 3
EHA00005
1
VPS05163
Type BAS79A BAS79B BAS79C BAS79D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Forward current Peak forward current
Marking BAS 79A BAS 79B BAS 79C BAS 79D 1 = A1 1 = A1 1 = A1 1 = A1
Pin Configuration 2=C1/2 3 = A2 2=C1/2 3 = A2 2=C1/2 3 = A2 2=C1/2 3 = A2
Package 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223
Symbol VR VRM
IF IFM IFS Ptot Tj Tstg
BAS 79A 50 50
BAS 79B 100 100
1 1 10 1.2
BAS 79C 200 200
BAS 79D 400 400
Unit V
A
Surge forward current, t = 1 s Total power dissipation , TS = 114 °C Junction temperature Storage temperature
W °C
150 -65 ... 150
Thermal Resistance Junction - soldering point 1) RthJS
30
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
BAS79A...BAS79D
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA BAS79A BAS79B BAS79C BAS79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 200mA trr 1 CD 10 -
Unit max. V
typ.
V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 -
µA
pF µs
Test circuit for reverse recovery time
DUT tr 10% tp ...
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