BAS83

DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS81; BAS82; BAS83 Schottky barrier diodes Product specification Supersedes data of 1996 Sep 30 1998 Jun 24 Philips Semiconductors Product specification Schottky barrier diodes FEATURES Low forward voltage High breakdown voltage Guard ring protected Hermetically-sealed small SMD package Low diode capacitance. handbook, halfpage BAS81; BAS82; BAS83 DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering. k a APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. Cathode indicated by a grey band. MAM190 Fig.1 Simplified outline (SOD80C), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR BAS81 BAS82 BAS83 IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp = 1 s PARAMETER continuous reverse voltage − − − − − − −65 − 40 50 60 30 150 500 +150 125 V V V mA mA mA °C °C CONDITIONS MIN. MAX. UNIT 1998 Jun 24 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS T...