BAS85
SILICON SCHOTTKY BARRIER DIODE Features
· · · For general applications Low turn-on voltage PN junction guard ring
...
BAS85
SILICON
SCHOTTKY BARRIER DIODE Features
· · · For general applications Low turn-on voltage PN junction guard ring
A B C
Mechanical Data
· · Glass case Weight: 0.05g (approx)
A B C
Min 3.4 1.40 0.20
Max 3.6 1.50 0.40
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Continuous reverse voltage Forward continuous current* Peak forward current* Surge forward current* Power dissipation* Junction temperature Operating temperature range Storage temperature range @ tp = 1s @ TA = 65°C Symbol VR IF IFM IFSM Ptot Tj TA TSTG Value 30 200 300 600 200 125 -65 to +125 -65 to +150 Unit V mA mA mA mW °C °C °C
Electrical Characteristics
Characteristic Reverse breakdown voltage
@ Tj = 25°C unless otherwise specified Symbol V(BR)R Min 30 Typ — Max — Unit V
10 mA pulses * Valid provided that electrodes are kept at ambient temperature.
DS30189 Rev. A-5
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BAS85
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