Document
BAS86
Schottky barrier single diode
25 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device (SMD) package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.
1.2 Features and benefits • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically sealed glass SMD package.
1.3 Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes
1.4 Quick reference data
Table 1. Symbol IF(AV)
VR VF
Quick reference data Parameter average forward current
reverse voltage
forward voltage
Conditions IF = 100 mA; Tamb = 25 °C
Min Typ Max Unit [1] - - 200 mA
- - 50 V - - 900 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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NXP Semiconductors
BAS86
Schottky barrier single diode
2. Pinning information
Table 2. Pin 1 2
Pinning information Symbol Description K cathode[1] A anode
Simplified outline
Graphic symbol
ka
LLDS; MiniMelf (SOD80C)
KA
aaa-003679
[1] The marking band indicates the cathode.
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS86
LLDS; MiniMelf
Description
hermetically sealed glass surface-mounted package; 2 connectors
Version SOD80C
4. Marking
Table 4. Marking codes Type number BAS86
Marking code marking band
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
IF forward current
IF(AV)
average forward current
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp = 10 ms; Tj(init) = 25 °C
current
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Min Max Unit
- 50 V
- 200 mA
[1] -
200 mA
- 500 mA
- 5A
- 125 °C -65 125 °C -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
BAS86
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
BAS86
Schottky barrier single diode
6. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
Conditions in free air
Min Typ Max Unit [1] - - 320 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Symbol VF
IR Cd trr
Characteristics Parameter
Conditions
forward voltage
IF = 0.1 mA; Tamb = 25 °C
IF = 1 mA; Tamb = 25 °C
IF = 10 mA; Tamb = 25 °C
IF = 30 mA; Tamb = 25 °C
IF = 100 mA; Tamb = 25 °C
reverse current
VR = 40 V; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02
diode capacitance
f = 1 MHz; Tamb = 25 °C; VR = 1 V
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C
Min Typ Max Unit - - 300 mV - - 380 mV - - 450 mV - - 600 mV - - 900 mV - - 5 µA
- - 8 pF - - 4 ns
BAS86
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2012
© NXP B.V. 2012. All rights reserved
3/9
NXP Semiconductors
BAS86
Schottky barrier single diode
103
IF (mA)
102
(1) (2) (3)
mld357
10
(1) (2) (3)
1
10- 1 0
0.4 0.8 1.2 VF (V)
Fig. 1.
(1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C
Forward current as a function of forward voltage; typical values
12 mgc687
Cd (pF)
8
4
0 0 10 20 30
Tamb = 25 °C; f = 1 MHz
40 50 VR (V)
Fig. 3. Diode capacitance as a function of reverse voltage; typical values
105 IR (nA)
104
103
102
mgc686 (1)
(2)
10
(3)
1
10- 1 0 10 20 30 40 50 VR (V)
(1) Tamb = 85 °C (2) Tamb = 25 °C (3) Tamb = −40 °C
Fig. 2. Reverse current as a function of reverse voltage; typical values
250 IF(AV) (mA)
200
mra540
150
100
50
0 0 50 100 150 Tamb (°C)
FR4 PCB, standard footprint
Fig. 4. Average forward current as a function of ambient temperature; derating curve
8. Test information
BAS86
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
tr tp
RS = 50 Ω V = VR + IF × RS
D.U.T. IF
10 %
SAMPLING OSCILLOSCOPE
Ri = 50 Ω VR 90 %
mga881
input signal
(1) IR = 1 mA
Fig. 5. Reverse recovery time test circuit and waveforms
9. Package outline
BAS86
Schottky barrier single diode
t + IF
trr t
(1)
output signal
0.3 3.7 3.3
Dimensions in mm
Fig. 6. LLDS; MiniMelf (SOD80C)
0.3
1.60 1.45
06-03-16
10. Soldering
4.55 4.30 2.30
2.25 1.70 1.60
0.90 (2x)
sod080c
Fig. 7. Reflow soldering footprint for SOD80C (LLDS; MiniMel.