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BAS86 Dataheets PDF



Part Number BAS86
Manufacturers NXP
Logo NXP
Description Schottky barrier single diode
Datasheet BAS86 DatasheetBAS86 Datasheet (PDF)

BAS86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device (SMD) package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering. 1.2 Features and benefits • Low forward voltage • High breakdown voltage • G.

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BAS86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device (SMD) package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering. 1.2 Features and benefits • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically sealed glass SMD package. 1.3 Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes 1.4 Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage Conditions IF = 100 mA; Tamb = 25 °C Min Typ Max Unit [1] - - 200 mA - - 50 V - - 900 mV [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Scan or click this QR code to view the latest information for this product NXP Semiconductors BAS86 Schottky barrier single diode 2. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K cathode[1] A anode Simplified outline Graphic symbol ka LLDS; MiniMelf (SOD80C) KA aaa-003679 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name BAS86 LLDS; MiniMelf Description hermetically sealed glass surface-mounted package; 2 connectors Version SOD80C 4. Marking Table 4. Marking codes Type number BAS86 Marking code marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR reverse voltage IF forward current IF(AV) average forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 IFSM non-repetitive peak forward tp = 10 ms; Tj(init) = 25 °C current Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max Unit - 50 V - 200 mA [1] - 200 mA - 500 mA - 5A - 125 °C -65 125 °C -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS86 Product data sheet All information provided in this document is subject to legal disclaimers. 25 July 2012 © NXP B.V. 2012. All rights reserved 2/9 NXP Semiconductors BAS86 Schottky barrier single diode 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - - 320 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Symbol VF IR Cd trr Characteristics Parameter Conditions forward voltage IF = 0.1 mA; Tamb = 25 °C IF = 1 mA; Tamb = 25 °C IF = 10 mA; Tamb = 25 °C IF = 30 mA; Tamb = 25 °C IF = 100 mA; Tamb = 25 °C reverse current VR = 40 V; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 diode capacitance f = 1 MHz; Tamb = 25 °C; VR = 1 V reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 300 mV - - 380 mV - - 450 mV - - 600 mV - - 900 mV - - 5 µA - - 8 pF - - 4 ns BAS86 Product data sheet All information provided in this document is subject to legal disclaimers. 25 July 2012 © NXP B.V. 2012. All rights reserved 3/9 NXP Semiconductors BAS86 Schottky barrier single diode 103 IF (mA) 102 (1) (2) (3) mld357 10 (1) (2) (3) 1 10- 1 0 0.4 0.8 1.2 VF (V) Fig. 1. (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Forward current as a function of forward voltage; typical values 12 mgc687 Cd (pF) 8 4 0 0 10 20 30 Tamb = 25 °C; f = 1 MHz 40 50 VR (V) Fig. 3. Diode capacitance as a function of reverse voltage; typical values 105 IR (nA) 104 103 102 mgc686 (1) (2) 10 (3) 1 10- 1 0 10 20 30 40 50 VR (V) (1) Tamb = 85 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig. 2. Reverse current as a function of reverse voltage; typical values 250 IF(AV) (mA) 200 mra540 150 100 50 0 0 50 100 150 Tamb (°C) FR4 PCB, standard footprint Fig. 4. Average forward current as a function of ambient temperature; derating curve 8. Test information BAS86 Product data sheet All information provided in this document is subject to legal disclaimers. 25 July 2012 © NXP B.V. 2012. All rights reserved 4/9 NXP Semiconductors tr tp RS = 50 Ω V = VR + IF × RS D.U.T. IF 10 % SAMPLING OSCILLOSCOPE Ri = 50 Ω VR 90 % mga881 input signal (1) IR = 1 mA Fig. 5. Reverse recovery time test circuit and waveforms 9. Package outline BAS86 Schottky barrier single diode t + IF trr t (1) output signal 0.3 3.7 3.3 Dimensions in mm Fig. 6. LLDS; MiniMelf (SOD80C) 0.3 1.60 1.45 06-03-16 10. Soldering 4.55 4.30 2.30 2.25 1.70 1.60 0.90 (2x) sod080c Fig. 7. Reflow soldering footprint for SOD80C (LLDS; MiniMel.


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