DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 series Schottky barrier double diodes
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product specification Supersedes data of 1998 Jan 21 1998 Oct 30
Philips Semiconductors
Product specification
Schottky barrier double diodes
FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power switched-mode power supplies Rectification Polarity protection. DESCRIPTION Planar
Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package
1 2 3
MSB002 - 1
BAT120 series
PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT120A diode configuration (symbol).
2 n.c.
MGL171
4
page
1
3
age
4
page
4 1 3
2 n.c.
MGL172
Fig.3
Top view
BAT120C diode configuration (symbol).
MARKING TYPE NUMBER BAT120A BAT120C BAT120S MARKING CODE
page
4 1 2 n.c. 3
AT120A AT120C AT120S
Fig.1
Simplified outline (SOT223) and pin configuration.
MGL173
Fig.4
BAT120S diode configuration (symbol).
1998 Oct 30
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature operating ambient temperature tp < 10 ...