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BAT120S Dataheets PDF



Part Number BAT120S
Manufacturers NXP
Logo NXP
Description Schottky barrier double diodes
Datasheet BAT120S DatasheetBAT120S Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 1998 Oct 30 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Plana.

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DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 1998 Oct 30 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package 1 2 3 MSB002 - 1 BAT120 series PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT120A diode configuration (symbol). 2 n.c. MGL171 4 page 1 3 age 4 page 4 1 3 2 n.c. MGL172 Fig.3 Top view BAT120C diode configuration (symbol). MARKING TYPE NUMBER BAT120A BAT120C BAT120S MARKING CODE page 4 1 2 n.c. 3 AT120A AT120C AT120S Fig.1 Simplified outline (SOT223) and pin configuration. MGL173 Fig.4 BAT120S diode configuration (symbol). 1998 Oct 30 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature operating ambient temperature tp < 10 ms; half sinewave; JEDEC method tp = 100 µs − − − − PARAMETER CONDITIONS BAT120 series MIN. MAX. UNIT 25 1 10 0.5 +150 125 +125 V A A A °C °C °C −65 − −65 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.5 IF = 100 mA IF = 1 A IR reverse current VR = 20 V; note 1; see Fig.6 VR = 25 V; note 1; see Fig.6 VR = 20 V; Tj = 100 °C; note 1 Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 100 UNIT K/W diode capacitance f = 1 MHz; VR = 4 V; see Fig.7 260 400 80 − − 100 300 450 500 1 10 − mV mV µA mA mA pF PARAMETER CONDITIONS TYP. MAX. UNIT 1998 Oct 30 3 Philips Semiconductors Product specification Schottky barrier double diodes GRAPHICAL DATA BAT120 series 104 handbook, halfpage IF (mA) 103 MBK572 104 handbook, halfpage IR (mA) 103 (1) MBK573 (2) (3) 102 (1) (2) (3) (4) 102 (4) 10 10 1 0 0.2 0.4 0.6 0.8 VF (V) 1.0 1 0 10 20 VR (V) 30 (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. Fig.6 Reverse current as a function of reverse voltage; typical values. 103 handbook, halfpage MBK571 Cd (pF) 102 10 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1998 Oct 30 4 Philips Semiconductors Product specification Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BAT120 series SOT223 D B E A X c y HE b1 v M A 4 Q A A1 1 e1 e 2 bp 3 w M B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 1998 Oct 30 5 Philips Semiconductors Product specification Schottky barrier double diodes DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BAT120 series This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their ow.


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