DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series Schottky barrier double diodes
Product specifica...
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series
Schottky barrier double diodes
Product specification File under Discrete Semiconductors, SC01 1997 Oct 03
Philips Semiconductors
Product specification
Schottky barrier double diodes
FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power switched-mode power supplies Rectification Polarity protection. DESCRIPTION
page
BAT140 series
PINNING BAT140 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2
age
page
4 1 3
2 n.c.
MGL171
BAT140A diode configuration (symbol).
4
4 1 3
2 n.c.
MGL172
Planar
Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. MARKING TYPE NUMBER BAT140A BAT140C BAT140S MARKING CODE AT140A AT140C AT140S Fig.1
1
Top view
2
3
MSB002 - 1
Fig.3
BAT140C diode configuration (symbol).
Simplified outline (SOT223) and pin configuration.
page
4 1 2 n.c. 3
MGL173
Fig.4
BAT140S diode configuration (symbol).
1997 Oct 03
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IF(AV) continuous reverse voltage continuous forward current average forward current Tamb = 65 °C; Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 − − − PARAMETER CONDITIONS
BAT140 series
MIN.
MAX.
UNIT
...