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BAT140C

NXP

Schottky barrier double diodes

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D087 BAT140 series Schottky barrier double diodes Product specifica...


NXP

BAT140C

File Download Download BAT140C Datasheet


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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D087 BAT140 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1997 Oct 03 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power switched-mode power supplies Rectification Polarity protection. DESCRIPTION page BAT140 series PINNING BAT140 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 age page 4 1 3 2 n.c. MGL171 BAT140A diode configuration (symbol). 4 4 1 3 2 n.c. MGL172 Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. MARKING TYPE NUMBER BAT140A BAT140C BAT140S MARKING CODE AT140A AT140C AT140S Fig.1 1 Top view 2 3 MSB002 - 1 Fig.3 BAT140C diode configuration (symbol). Simplified outline (SOT223) and pin configuration. page 4 1 2 n.c. 3 MGL173 Fig.4 BAT140S diode configuration (symbol). 1997 Oct 03 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IF(AV) continuous reverse voltage continuous forward current average forward current Tamb = 65 °C; Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 − − − PARAMETER CONDITIONS BAT140 series MIN. MAX. UNIT ...




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