Document
BAT 18
Silicon RF Switching Diode
q q
BAT 18 …
Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance
Type BAT 18 BAT 18-04
Marking A2 AU
Ordering Code Pin Configuration Q62702-A787 Q62702-A938
Package1) SOT 23
BAT 18-05
AS
Q62702-A940
BAT 18-06
AT
Q62702-A942
Maximum Ratings per Diode Parameter Reverse voltage Forward current Operating and storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR IF Top Tstg
Values 35 100
Unit V mA
– 55 … + 150 ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BAT 18...
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V VR = 20 V, TA = 60 ˚C Diode capacitance , f = 1 MHz VR = 20 V Forward resistance IF = 5 mA, f = 100 MHz Series inductance Symbol min. VF IR – – CT rf LS – – – – – 0.75 0.4 2 20 200 1 0.7 – pF Ω nH – Values typ. 0.38 max. 1.2 V nA Unit
Diode capacitance CT = f (VR) f = 1 MHz
Forward resistance rf = f (IF) f = 100 MHz
Semiconductor Group
2
.