Silicon Schottky Diode
q q q q q q
BAT 32
RF detector Low-power mixer Zero bias Very low capacitance For frequencies u...
Silicon
Schottky Diode
q q q q q q
BAT 32
RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes available
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band (GHz) Marking Ordering Code (tape and reel) 32 Q62702-A826 Pin Configuration Package1) Cerec-X
BAT 32 … 18 (X, Ku)
Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 6.5 50 150 – 55 … + 150 – 55 … + 150 Unit V mA ˚C
1)
For detailed information see chapter Package Outlines.
BAT 32
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 1 mA Forward voltage IF = 1 mA IF = 10 mA Diode capacitance VR = 0.15 V, f = 1 MHz Differential resistance VF = 0, f = 10 kHz Symbol min. V(BR) VF – – CT Ro – – 0.2 0.6 0.20 15 – – 0.24 – pF kΩ 6.5 Values typ. – max. – V Unit
Forward current IF = f (VF)
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