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BAT41

General Semiconductor

Schottky Diodes

BAT41 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ For general purpose applications ♦ This diode featutres low tu...


General Semiconductor

BAT41

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BAT41 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ For general purpose applications ♦ This diode featutres low turn-on voltage max. ∅.079 (2.0) max. .150 (3.8) and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designation LL41. Cathode Mark min. 1.083 (27.5) ♦ This diode is also available in a MiniMELF case max. ∅.020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C Surge Forward Current at tp = 10 ms, Tamb = 25 °C Power Dissipation, Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 100 1001) 3501) 7501) 4001) 125 –65 to +125 –65 to +150 Unit V mA mA mA mW °C °C °C VRRM IF IFRM ISFM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. 4/98 BAT41 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Test Conditions Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses Forward Voltage Pulse Test tp = 300 µs at IF = 1 mA at IF = 200 mA Leakage Current Pulse Test tp = 300 µs at VR = 50 V, at Tj...




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