DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BAT54L Schottky barrier diode
Product specification 2003 Jun 23...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BAT54L
Schottky barrier diode
Product specification 2003 Jun 23
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES Low forward voltage Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) Boardspace 1.17 mm2 (approx. 10% of SOT23) Power dissipation comparable to SOT23. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Mobile communication, digital (still) cameras, PDAs and PCMCIA cards.
Bottom view
MDB391
BAT54L
DESCRIPTION Planar
Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package.
handbook, halfpage
Marking code: S3. The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD882) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Ptot Tstg Tj Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60 µm copper strip line. PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature tp ≤ 1s; δ ≤ 0.5 tp < 10 ms Tamb ≤ 25 °C; note 1 CONDITIONS − − − − − −65 − MIN. MAX. 30 200 300 600 250 +150 150 V mA mA mA mW °C °C UNIT
2003 Jun 23
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless other...