BAT56

DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 December 1993 Philips Semiconductors Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES Low leakage current Low turn-on and high breakdown voltage Ultra-fast switching speed. DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package. k a BAT56 QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd PARAMETER continuous reverse voltage continuous forward current forward voltage reverse current junction temperature diode capacitance VR = 1 V IF = 1 mA VR = 60 V CONDITIONS MAX. 60 30 410 200 150 1.6 UNIT V mA mV nA °C pF PIN CONFIGURATION MAM058 Top view Fig.1 Simplified outline (SOD123) and symbol. December 1993 2 Philips Semiconductors Preliminary specification Schottky barrier diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tamb Tj PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature operating ambient temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms CONDITIONS − − − − −65 −65 − MIN. MAX. 60 30 100 250 +150 +150 150 BAT56 UNIT V mA mA mA °C...