BAT60

BAT60B... Silicon Schottky Diode High current rectifier Schottky diode with very low VF drop (typ. 0.24 V at IF = 10mA) For power supply applications For clamping and protection in low voltage applications For detection and step-up-conversion BAT60B 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT60B Parameter Package SOD323 Configuration single Symbol VR IF I FSM Ptot Tj T op T stg Symbol RthJS Value Marking white/5 Unit Maximum Ratings at TA = 25°C, unless otherwise specified Diode reverse voltage1) Forward current Non-repetitive peak surge forward current (t ≤ 10ms) Total power dissipation TS ≤ 28°C 10 3 5 1350 150 -55 ... 125 -55 ... 150 Value ≤ 90 V A mW °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2) 1For 2For K/W TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage. calculation of RthJA please refer to Application Note Thermal Resistance 1 Jun-15-2004 BAT60B... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current1) IR VR = 5 V VR = 8 V VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Unit µA VF 5 10 100 410 0.24 0.32 0.4 0.48 15 25 800 1500 V 0.3 0.38 0.5 0.6 Forward voltage1) IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA 0.2 0.26 0.32 0.36 AC Characteristics Diode capacitance ...