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BAT60A

Siemens Semiconductor Group

Silicon Schottky Diode

BAT 60A Silicon Schottky Diode • Rectifier Schottky diode with extreme low VF drop for mobile communication • For power ...



BAT60A

Siemens Semiconductor Group


Octopart Stock #: O-180352

Findchips Stock #: 180352-F

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Description
BAT 60A Silicon Schottky Diode Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply For clamping and proptection in low voltage application For detection and step-up-conversion 2 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 60A Marking white/3 Ordering Code Q62702-A1188 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S = 28 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 10 3 5 1350 150 - 55 ...+150 Unit V A mA mW °C VR IF IFSM Ptot Tj Tstg RthJA RthJS ≤ 160 ≤ 90 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 60A Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. mA 0.3 0.45 18 µA V 0.12 0.2 0.3 Unit IR VR = 5 V VR = 8 V Reverse current IR VF - VR = 8 V, TA = 80 °C Forward voltage I F = 10 mA I F = 100 mA I F = 1000 mA AC characteristics Diode capacitance CT - 20 - pF VR = 5 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 60A Forward current IF = f (TA*;TS) * Package mounted on epoxy Reverse current IR = f (TA) VR = 8V 10 0 A 3200 mA 10 -...




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