BAT60B

BAT 60B Silicon Schottky Diode Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply For clamping and proptection in low voltage application For detection and step-up-conversion 2 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 60B Marking blue/5 Ordering Code Q62702-A1189 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S = 28 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 10 3 5 1350 150 - 55 ...+150 Unit V A mA mW °C VR IF IFSM Ptot Tj Tstg RthJA RthJS ≤ 160 ≤ 90 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 60B Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA AC characteristics Diode capacitance CT - 20 - pF VR = 5 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 60B Forward current IF = f (TA*;TS) * Package mounted on epoxy Reverse current IR = f (TA) VR = 8V...