BAT62-07W

BAT 62-07W Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-07W Marking Ordering Code 62s Q62702-A1198 Pin Configuration 1=C1 2=C2 3=A2 4=A1 Package SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 103 °C Junction temperature Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 40 20 100 150 -55 ...+150 Unit V mA mW °C VR IF Ptot Tj Tstg RthJA RthJS ≤ 630 ≤ 470 K/W Junction - soldering point Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 62-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1 Unit IR VF - µA V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance CT CC R0 Ls - 0.35 0.1 225 2 0.6 - pF VR = 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 62-07W Forward current IF = f (TA*;TS) * mounted on alumina Forward current IF = f (VF ) TA = parameter 10 4 25 uA mA TA IF 15 TS 10 3 T A = 25°C T A = 85°C T A = 125°C T A = -40°C 10 10 2 5 IF 120 °C 10 1 0.0 0 0 20 40 60 80 100 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 1.9...