BAT63-07WE6811

BAT63-07WE6811 Silicon Schottky Diode
Low barrie diode for detectors up to GHz frequencies
For high-speed switching applications
Zero bias detector diode BAT63-07W 4 3 D 1 D 2 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT63-07WE6811 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation TS
103 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Package SOT343 Configuration parallel pair LS (nH) Marking 1.6 63s Symbol VR IF Ptot Tj Tstg Symbol RthJS Value 8 100 100 150 -55 ... 150 Unit V mA mW °C Value Unit K/W
470 calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-24-2002 BAT63-07WE6811 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse voltage IR = 100 µA VR VF Symbol min. 8 - Values typ. 10 190 max. 300 Unit V mV Forward voltage IF = 1 mA AC Characteristics Diode capacitance VR = 0.2 V, f = 1 MHz CT R0 - 0.65 30 0.85 - pF k
Differential resistance VR = 0 V, f = 10 kHz 2 Jul-24-2002 BAT63-07WE6811 Diode capacitance CT = (VR ) f = 1MHz 1 pF A Forward current IF =  (VF) TA = Parameter 10 -1 0.8 0.7 10 -2 CT 0.6 0.5 0.4 IF 10 -3 0.3 0.2 0.1 0 0 V TA=125°C TA=85°C TA=25°C TA=-40°C 0.5 1 1.5 2 3 10 -4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 VR VF Forward current IF =  (TS ) Permissible Puls Load RthJS = ...