BAT68-03

BAT 68-03W Silicon Schottky Diode Preliminary data For mixer applications in the VHF/UHF range For high speed switching Type Marking Ordering Code Q62702Q62702-A1046 Pin Configuration 1=A 2=K Package SOD-323 BAT 68-03W K Maximum Ratings Parameter Diode reverse voltage Forward current Total Power dissipation Symbol Values 8 130 150 Unit V mA mW 150 - 65 ... + 150 - 65 ... + 150 °C VR IF Ptot Tj Top Tstg TS = 95 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction ambient 1) RthJA RthJS 445 365 K/W Junction - soldering point Semiconductor Group 1 Mar-04-1996 BAT 68-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 8 318 390 - V µA 0.1 1.2 mV 340 340 500 pF 1 Ω 10 I(BR) = 10 µA Reverse current IR VR = 1 V, TA = 25 °C VR = 1 V, TA = 60 °C Forward voltage VF IF = 1 mA IF = 10 mA Diode capacitance CT RF VR = 0 , f = 1 MHz Differential forward resistance IF = 5 mA Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 200 mA IF 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS TA TS Semiconductor Group 2 Mar-04-1996 BAT 68-03W Permissible Pulse Load RTHJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 ...