Document
BAT 68W Silicon Schottky Diodes
Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching
BAT 68-04W
BAT68-05W
BAT68-06W
Type BAT 68-04W BAT 68-05W BAT 68-06W BAT 68W
Marking Ordering Code 84s 85s 86s 83s Q62702Q62702Q62702Q62702-
Pin Configuration 1 = A1 1 = A1 1 = K1 1=A 2 = K2 2 = A2 2 = K2 n.c.
Package 3 = K1/A2 SOT-323 3 = K1/K2 SOT-323 3 = A1/A2 SOT-323 3=K SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT68W Symbol Values 8 130 150 150 150 - 65 ... + 150 - 65 ... + 150 ≤ 435 ≤ 550 ≤ 355 390 K/W °C Unit V mA mW
VR IF TS=97°C Ptot
Total power dissipation, BAW68-04...06W TS=92°C Ptot Junction temperature Tj Operating temperature range Storage temperature Thermal Resistance Junction - ambient, BAT68W Junction - ambient, BAT68-04W...06W Junctui - soldering point, BAT68W Junction - soldering point, BAT68-04W...06W
Top Tstg RthJA RthJA
RthJS
RthJS
Semiconductor Group
1
Dec-20-1996
BAT 68W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit
V(BR)
8 318 390 -
V µA 0.1 1.2 mV 340 340 500 pF 1 Ω 10
I(BR) = 100 µA
Reverse current
IR
VR = 1 V, TA = 25 °C VR = 1 V, TA = 60 °C
Forward voltage
VF
IF = 1 mA IF = 10 mA
Diode capacitance
CT RF
VR = 1 V, f = 1 MHz
Differential forward resistance
IF = 5 mA
Forward current IF = f (TA*;TS) BAT 68W
200 mA
Forward current IF = f (TA*;TS) BAT 68-04W, -05W, -06W
200 mA
*): mounted on alumina 15mm x 16.7mm x 0.7mm *): mounted on alumina 15mm x 16.7mm x 0.7mm
IF
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS
IF
160 140
TS TA
120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS
TA
TS
Semiconductor Group
2
Dec-20-1996
BAT 68W
Permissible Pulse Load RTHJS = f(tp) BAT 68W
Permissible Pulse Load IFmax/IFDC = f(tp) BAT 68W
10 3
10 2
K/W
RthJS
10 2
IFmax/IFDC
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Permissible Pulse Load RTHJS = f(tp) BAT 68-04W, -05W, -06W
Permissible Pulse Load IFmax/IFDC = f(tp) BAT 68-04W, -05W, -06W
10 3
10 2
K/W
RthJS
10 2
IFmax/IFDC
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
3
Dec-20-1996
BAT 68W
Diode capacitance CT = f (VR) f = 1MHz
Differential forward resistance rf = f(IF) f = 10kHz
Forward Current IF = f(VF)
Reverse current IR = f (TA)
VR = 28V
Semiconductor Group
4
Dec-20-1996
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