Document
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
Rev. 06 — 21 December 2006
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
1PS76SB21
SOD323
BAT721
SOT23
BAT721A
SOT23
BAT721C
SOT23
BAT721S
SOT23
JEITA SC-76 -
Configuration
single single dual common anode dual common cathode dual series
1.2 Features
I Low forward voltage I Small SMD plastic packages I Low capacitance
1.3 Applications
I Ultra high-speed switching I Voltage clamping I Line termination I Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data Symbol Parameter Per diode IF forward current VR reverse voltage VF forward voltage
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions IF = 200 mA
Min Typ Max Unit
- - 200 mA - - 40 V [1] - - 550 mV
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
2. Pinning information
Table 3. Pinning Pin Description 1PS76SB21 1 cathode 2 anode
BAT721 1 2 3
anode not connected cathode
BAT721A 1 2 3
cathode (diode 1)
cathode (diode 2)
anode (diode 1), anode (diode 2)
BAT721C 1 2 3
anode (diode 1)
anode (diode 2)
cathode (diode 1), cathode (diode 2)
BAT721S 1 2 3
anode (diode 1)
cathode (diode 2)
cathode (diode 1), anode (diode 2)
[1] The marking bar indicates the cathode.
Simplified outline Symbol
[1] 1
2
12 sym001
3 1
12 006aaa144
3
2 n.c. 006aaa436
3
12 006aaa144
1
3 2
006aaa439
33
1
12 006aaa144
2 006aaa438
3
12 006aaa144
1
3 2
006aaa437
1PS76SB21_BAT721_SER_6
Product data sheet
Rev. 06 — 21 December 2006
© NXP B.V. 2006. All rights reserved.
2 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
1PS76SB21 SC-76
plastic surface-mounted package; 2 leads
BAT721
-
plastic surface-mounted package; 3 leads
BAT721A
BAT721C
BAT721S
4. Marking
Table 5. Marking codes Type number 1PS76SB21 BAT721 BAT721A BAT721C BAT721S
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Marking code[1] S1 L7* L8* L9* L0*
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR IF IFSM
Tj Tamb Tstg
reverse voltage forward current non-repetitive peak forward current
junction temperature ambient temperature storage temperature
half sine wave; JEDEC method; tp = 8.3 ms
-
−65 −65
Version SOD323 SOT23
Max Unit
40 V 200 mA 1A
125 +150 +150
°C °C °C
1PS76SB21_BAT721_SER_6
Product data sheet
Rev. 06 — 21 December 2006
© NXP B.V. 2006. All rights reserved.
3 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per diode
Rth(j-a)
thermal resistance from junction to ambient
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
Conditions in free air
Min Typ Max Unit
[1]
- - 450 K/W - - 500 K/W - - 500 K/W - - 500 K/W - - 500 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 10 mA
IF = 100 mA
IF = 200 mA
IR
reverse current
VR = 30 V
VR = 30 V; Tj = 100 °C
Cd diode capacitance VR = 0 V; f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
[1] - - 300 mV
[1] - - 420 mV
[1] - - 550 mV
- - 15 µA
--3
mA
-
40 50
pF
1PS76SB21_BAT721_SER_6
Product data sheet
Rev. 06 — 21 December 2006
© NXP B.V. 2006. All rights reserved.
4 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
103 IF (mA)
102
10
006aaa689
(1) (2) (3)
(4)
1
10−1 0
200 400 600 VF (mV)
(1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C
Fig 1. Forward current as a function of forward voltage; typical values
102
Cd (pF)
10
10 IR (mA)
1
10−1
006aaa690 (1)
(2)
10−2 10−3
(3)
10−4
10−5
(4)
10−6 0
10 20 30 40 VR (V)
(1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C
Fig 2. Reverse current as a function of reverse voltage; typical values
mbk574
1 0 10 20 30 VR (V) 40
Tamb = 25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values
1PS76SB21_BAT721_SER_6
Product data sheet
Rev. 06 — 21 December 2006
© NXP B.V. 2006. All rights reserved.
5 of 11
NXP Semiconductors
8. Package outline
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
1.35 1.15
1
0.45 0.15
1.1 0.8
2.7 1.8 2.3 1.6
2.5 1.4 2.1 1.2
3.0 2.8
3
1.1 0.9
0.45 0.15
Dimensions in .