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BAT74S

NXP

Dual Schottky barrier diode

BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Pla...


NXP

BAT74S

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Description
BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Low forward voltage Low capacitance AEC-Q101 qualified 1.3 Applications Ultra high-speed switching Line termination Voltage clamping Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IF forward current VR reverse voltage Per diode VF forward voltage IR reverse current Conditions IF = 100 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C VR = 25 V; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C Min Typ Max Unit - - 200 mA - - 30 V - - 800 mV - - 2 µA Scan or click this QR code to view the latest information for this product NXP Semiconductors BAT74S Dual Schottky barrier diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 n.c. not connected 3 K2 cathode (diode 2) 4 A2 anode (diode 2) 5 n.c. not connected 6 K1 cathode (diode 1) Simplified outline 654 Graphic symbol K1 A2 123 TSSOP6 (SOT363) A1 K2 aaa-005709 3. Ordering information Table 3. Ordering information Type number Package Name BAT74S TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT3...




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