BAT81

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT81; BAT82; BAT83 Schottky barrier diodes Product specification Supersedes data of July 1991 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diodes FEATURES Low forward voltage High breakdown voltage Guard ring protected Hermetically-sealed leaded glass package Low diode capacitance. k handbook, halfpage BAT81; BAT82; BAT83 DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. a APPLICATIONS MAM193 Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR BAT81 BAT82 BAT83 IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp ≤ 10 ms PARAMETER continuous reverse voltage − − − − − − −65 − 40 50 60 30 150 500 150 125 V V V mA mA mA °C °C CONDITIONS MIN. MAX. UNIT 1996 Mar 20 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = ...