DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83 Schottky barrier diodes
Product specificatio...
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification Supersedes data of July 1991 1996 Mar 20
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES Low forward voltage High breakdown voltage Guard ring protected Hermetically-sealed leaded glass package Low diode capacitance.
k handbook, halfpage
BAT81; BAT82; BAT83
DESCRIPTION Planar
Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
a
APPLICATIONS
MAM193
Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR BAT81 BAT82 BAT83 IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp ≤ 10 ms PARAMETER continuous reverse voltage − − − − − − −65 − 40 50 60 30 150 500 150 125 V V V mA mA mA °C °C CONDITIONS MIN. MAX. UNIT
1996 Mar 20
2
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = ...