High-speed diode. BAV10 Datasheet

BAV10 Datasheet PDF, Equivalent


Part Number

BAV10

Description

High-speed diode

Manufacture

NXP

Total Page 7 Pages
PDF Download
Download BAV10 Datasheet PDF


BAV10 Datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV10
High-speed diode
Product specification
Supersedes data of April 1996
1996 Sep 16

BAV10 Datasheet
Philips Semiconductors
High-speed diode
Product specification
BAV10
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 6 ns
General application
Continuous reverse voltage:
max. 60 V
Repetitive peak reverse voltage:
max. 60 V
Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The BAV10 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
handbook, halfpagke
a
MAM246
The diode is type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
MAX.
60
60
300
600
UNIT
V
V
mA
mA
9A
3A
1A
350 mW
65 +200 °C
200 °C
1996 Sep 16
2


Features Datasheet pdf DISCRETE SEMICONDUCTORS DATA SHEET M3D 176 BAV10 High-speed diode Product spe cification Supersedes data of April 19 96 1996 Sep 16 Philips Semiconductors Product specification High-speed dio de FEATURES • Hermetically sealed lea ded glass SOD27 (DO-35) package • Hig h switching speed: max. 6 ns • Genera l application • Continuous reverse vo ltage: max. 60 V • Repetitive peak re verse voltage: max. 60 V • Repetitive peak forward current: max. 600 mA. The diode is type branded. handbook, halfp age k BAV10 DESCRIPTION The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APP LICATIONS • High-speed switching. Fi g.1 Simplified outline (SOD27; DO-35) a nd symbol. LIMITING VALUES In accordan ce with the Absolute Maximum Rating Sys tem (IEC 134). SYMBOL VRRM VR IF IFRM I FSM PARAMETER repetitive peak reverse v oltage continuous reverse voltage continuous forward current repetitive peak forw.
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