Planar Diodes. BAV100 Datasheet

BAV100 Datasheet PDF, Equivalent


Part Number

BAV100

Description

Silicon Epitaxial Planar Diodes

Manufacture

Vishay Telefunken

Total Page 4 Pages
PDF Download
Download BAV100 Datasheet PDF


BAV100 Datasheet
Silicon Epitaxial Planar Diodes
Applications
General purposes
BAV100...BAV103
Vishay Telefunken
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Test Conditions
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Power dissipation
Junction temperature
Storage temperature range
tp=1s
Type
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
Symbol
VRRM
VRRM
VRRM
VRRM
VR
VR
VR
VR
IFSM
IFRM
IF
PV
Tj
Tstg
Value
60
120
200
250
50
100
150
200
1
625
250
500
175
–65...+175
Unit
V
V
V
V
V
V
V
V
A
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction lead
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJL
RthJA
Value
350
500
Unit
K/W
K/W
Document Number 85542
Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)

BAV100 Datasheet
BAV100...BAV103
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Test Conditions
IF=100mA
VR=50V
VR=100V
VR=150V
VR=200V
Tj=100°C, VR= 50V
Tj=100°C, VR=100V
Tj=100°C, VR=150V
mTj=100°C, VR=200V
IR=100 A, tp/T=0.01,
tp=0.3ms
Diode capacitance
Differential forward
resistance
Reverse recovery time
VR=0, f=1MHz
IF=10mA
WIF=IR=30mA, iR=3mA,
RL=100
Type
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
Symbol Min Typ Max Unit
VF
IR
IR
IR
IR
IR
IR
IR
IR
V(BR)
V(BR)
V(BR)
V(BR)
CD
rf
1V
100 nA
100 nA
100 nA
100 nA
15 mA
15 mA
15 mA
15 mA
60 V
120 V
200 V
250 V
1.5 pF
5W
trr 50 ns
Characteristics (Tj = 25_C unless otherwise specified)
1000
1000
100
Scattering Limit
10
1
0.1
VR = VRRM
Tj = 25°C
100
10
1
Scattering Limit
0.01
0
94 9084
40 80 120 160
Tj – Junction Temperature ( °C )
200
Figure 1. Reverse Current vs. Junction Temperature
0.1
0
94 9085
0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
2.0
Figure 2. Forward Current vs. Forward Voltage
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 85542
Rev. 2, 01-Apr-99


Features Datasheet pdf BAV100...BAV103 Vishay Telefunken Silic on Epitaxial Planar Diodes Application s General purposes 94 9371 Absolute M aximum Ratings Tj = 25_C Parameter Repe titive peak reverse voltage g Test Cond itions Type BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 Symbol VRR M VRRM VRRM VRRM VR VR VR VR IFSM IFRM IF PV Tj Tstg Value 60 120 200 250 50 1 00 150 200 1 625 250 500 175 –65...+1 75 Unit V V V V V V V V A mA mA mW °C °C Reverse voltage g Peak forward su rge current Repetitive peak forward cur rent Forward current Power dissipation Junction temperature Storage temperatur e range tp=1s Maximum Thermal Resista nce Tj = 25_C Parameter Junction lead J unction ambient Test Conditions on PC b oard 50mmx50mmx1.6mm Symbol RthJL RthJA Value 350 500 Unit K/W K/W Document N umber 85542 Rev. 2, 01-Apr-99 www.vish ay.de • FaxBack +1-408-970-5600 1 (4) BAV100...BAV103 Vishay Telefunken Ele ctrical Characteristics Tj = 25_C Param eter Forward voltage Reverse current Test Conditions IF=100mA VR=50V .
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