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BAV102

Fairchild Semiconductor

High Voltage / General Purpose Diode

BAV102 — High Voltage, General Purpose Diode April 2013 BAV102 High Voltage, General Purpose Diode Cathode Band SOD80...


Fairchild Semiconductor

BAV102

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Description
BAV102 — High Voltage, General Purpose Diode April 2013 BAV102 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the location of the cathode terminal which is indicated by the first color band. Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units WIV IO IF if IFSM Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 μs 150 V 200 mA 500 mA 600 mA 1.0 A 4.0 A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200 -65 to +200 °C °C Note: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD RθJA Parameter Power Dissipation Linear Derating Factor from TA = 25°C Th...




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