BAV102 diodes Datasheet

BAV102 Datasheet PDF, Equivalent


Part Number

BAV102

Description

Single general-purpose switching diodes

Manufacture

NXP

Total Page 11 Pages
Datasheet
Download BAV102 Datasheet


BAV102
BAV102; BAV103
Single general-purpose switching diodes
Rev. 4 — 6 August 2010
Product data sheet
1. Product profile
1.1 General description
Single general-purpose switching diodes, fabricated in planar technology, and
encapsulated in small hermetically sealed glass SOD80C Surface-Mounted
Device (SMD) packages.
Table 1. Product overview
Type number
Package
NXP
BAV102
SOD80C
BAV103
JEITA
-
Configuration
single
1.2 Features and benefits
„ High switching speed: trr 50 ns
„ Low leakage current
„ Low capacitance: Cd 5 pF
„ Small hermetically sealed glass
SMD package
1.3 Applications
„ High-speed switching
„ General-purpose switching
„ Voltage clamping
„ Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
IF
VR
trr
Quick reference data
Parameter
forward current
reverse voltage
BAV102
BAV103
reverse recovery time
Conditions
Min Typ Max Unit
[1][2] - - 250 mA
- - 150 V
- - 200 V
[3] - - 50 ns
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.

BAV102
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking band indicates the cathode.
3. Ordering information
Simplified outline
[1]
ka
Graphic symbol
12
006aab040
Table 4. Ordering information
Type number Package
Name
Description
BAV102
BAV103
-
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
4. Marking
Table 5. Marking codes
Type number
BAV102
BAV103
Marking code
marking band
marking band
5. Limiting values
BAV102_BAV103
Product data sheet
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
voltage
BAV102
-
BAV103
-
VR reverse voltage
BAV102
-
BAV103
-
IF forward current
IFRM
repetitive peak forward
current
[1][2] -
-
IFSM non-repetitive peak square wave
forward current
tp = 1 μs
tp = 100 μs
tp = 1 s
[3]
-
-
-
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 August 2010
Max Unit
200 V
250 V
150 V
200 V
250 mA
625 mA
9A
3A
1A
© NXP B.V. 2010. All rights reserved.
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Features BAV102; BAV103 Single general-purpose sw itching diodes Rev. 4 — 6 August 2010 Product data sheet 1. Product profil e 1.1 General description Single gener al-purpose switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD 80C Surface-Mounted Device (SMD) packag es. Table 1. Product overview Type nu mber Package NXP BAV102 SOD80C BAV 103 JEITA - Configuration single 1.2 Features and benefits „ High switchin g speed: trr ≤ 50 ns „ Low leakage c urrent „ Low capacitance: Cd ≤ 5 pF „ Small hermetically sealed glass SMD package 1.3 Applications „ High-spee d switching „ General-purpose switchin g „ Voltage clamping „ Reverse polar ity protection 1.4 Quick reference dat a Table 2. Symbol IF VR trr Quick ref erence data Parameter forward current r everse voltage BAV102 BAV103 reverse re covery time Conditions Min Typ Max Un it [1][2] - - 250 mA - - 150 V - - 200 V [3] - - 50 ns [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on.
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