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BAV102

General Semiconductor

Small Signal Diodes

BAV100 THRU BAV103 Small Signal Diodes MiniMELF FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063...


General Semiconductor

BAV102

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Description
BAV100 THRU BAV103 Small Signal Diodes MiniMELF FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the type designation BAS19 - BAS21. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage BAV100 BAV101 BAV102 BAV103 VR VR VR VR IF I0 Value 60 120 200 250 2501) 2001) Unit V V V V mA mA Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °C, Tamb = 25 °C Surge Forward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) IFRM IFSM Ptot Tj TS 6251) 1 4001) 175 –65 to +175 mA A mW °C °C Valid provided that electrodes are kept at ambient temperature. 4/98 BAV100 THRU BAV103 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward voltage at IF = 100 mA Leakage Current at VR = 50 V at VR = 50 V, Tj = 100 °C at VR = 100 V at VR =...




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