Small Signal Diodes
BAV100 THRU BAV103
Small Signal Diodes
MiniMELF
FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose
∅ .063...
Description
BAV100 THRU BAV103
Small Signal Diodes
MiniMELF
FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose
∅ .063 (1.6) .055 (1.4)
Cathode Mark
♦ These diodes are also available in other
case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the type designation BAS19 - BAS21.
.142 (3.6) .134 (3.4)
.019 (0.48) .011 (0.28)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Reverse Voltage BAV100 BAV101 BAV102 BAV103 VR VR VR VR IF I0
Value 60 120 200 250 2501) 2001)
Unit V V V V mA mA
Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °C, Tamb = 25 °C Surge Forward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
IFRM IFSM Ptot Tj TS
6251) 1 4001) 175 –65 to +175
mA A mW °C °C
Valid provided that electrodes are kept at ambient temperature.
4/98
BAV100 THRU BAV103
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Forward voltage at IF = 100 mA Leakage Current at VR = 50 V at VR = 50 V, Tj = 100 °C at VR = 100 V at VR =...
Similar Datasheet