Document
BAV102; BAV103
Single general-purpose switching diodes
Rev. 4 — 6 August 2010
Product data sheet
1. Product profile
1.1 General description
Single general-purpose switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages.
Table 1. Product overview
Type number
Package
NXP
BAV102
SOD80C
BAV103
JEITA -
Configuration single
1.2 Features and benefits
High switching speed: trr ≤ 50 ns Low leakage current
Low capacitance: Cd ≤ 5 pF Small hermetically sealed glass
SMD package
1.3 Applications
High-speed switching General-purpose switching
Voltage clamping Reverse polarity protection
1.4 Quick reference data
Table 2. Symbol IF VR
trr
Quick reference data Parameter forward current reverse voltage
BAV102 BAV103 reverse recovery time
Conditions
Min Typ Max Unit [1][2] - - 250 mA
- - 150 V - - 200 V [3] - - 50 ns
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
2. Pinning information
Table 3. Pin 1 2
Pinning Description cathode anode
[1] The marking band indicates the cathode.
3. Ordering information
Simplified outline
[1]
ka
Graphic symbol
12 006aab040
Table 4. Ordering information
Type number Package
Name
Description
BAV102 BAV103
-
hermetically sealed glass surface-mounted package; 2 connectors
Version SOD80C
4. Marking
Table 5. Marking codes Type number BAV102 BAV103
Marking code marking band marking band
5. Limiting values
BAV102_BAV103
Product data sheet
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse voltage
BAV102
-
BAV103
-
VR reverse voltage BAV102
-
BAV103
-
IF forward current
IFRM
repetitive peak forward
current
[1][2] -
IFSM non-repetitive peak square wave
forward current
tp = 1 μs
tp = 100 μs
tp = 1 s
[3]
-
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 August 2010
Max Unit
200 V 250 V
150 V 200 V 250 mA 625 mA
9A 3A 1A
© NXP B.V. 2010. All rights reserved.
2 of 11
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot Tj Tamb Tstg
total power dissipation junction temperature ambient temperature storage temperature
Tamb ≤ 25 °C
[2] −65 −65
Max 400 175 +175 +175
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Tj = 25 °C prior to surge.
6. Thermal characteristics
Unit mW °C °C °C
Table 7. Symbol Rth(j-a)
Rth(j-t)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air junction to ambient
thermal resistance from junction to tie-point
Min Typ Max Unit [1] - - 375 K/W
- - 300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF forward voltage
IF = 100 mA
IF = 200 mA
IR reverse current
BAV102
VR = 150 V
VR = 150 V; Tj = 150 °C
BAV103
VR = 200 V
VR = 200 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr reverse recovery time
Min
[1]
-
Typ
-
--
--
--
--
--
[2] -
-
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
Max Unit
1.0 V 1.25 V
100 nA 100 μA 100 nA 100 μA 5 pF 50 ns
BAV102_BAV103
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 August 2010
© NXP B.V. 2010. All rights reserved.
3 of 11
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
600 IF (mA) 400
200
mbg459
(1) (2)
(3)
102 IFSM (A)
10
1
mbg703
0 0 1 VF (V) 2
(1) Tamb = 150 °C; typical values (2) Tamb = 25 °C; typical values (3) Tamb = 25 °C; maximum values
Fig 1. Forward current as a function of forward voltage
103
IR (μA)
102
mgd009
10
1
10−1
10−2 0
100 Tj (°C)
200
Fig 3.
VR = VRmax Solid line: maximum values Dotted line: typical values
Reverse current as a function of junction temperature
10−1 1
10 102 103 104 tp (μs)
Based on square wave currents. Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values
1.6 Cd (pF)
1.4
mgd005
1.2
1.0
0.8 0
10
f = 1 MHz; Tamb = 25 °C
VR (V)
20
Fig 4. Diode capacitance as a function of reverse voltage; typical values
BAV102_BAV103
Product data sheet
All information provided in this document is subject to legal disclaimers.
.