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BAV103 Dataheets PDF



Part Number BAV103
Manufacturers NXP
Logo NXP
Description Single general-purpose switching diodes
Datasheet BAV103 DatasheetBAV103 Datasheet (PDF)

BAV102; BAV103 Single general-purpose switching diodes Rev. 4 — 6 August 2010 Product data sheet 1. Product profile 1.1 General description Single general-purpose switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. Table 1. Product overview Type number Package NXP BAV102 SOD80C BAV103 JEITA - Configuration single 1.2 Features and benefits „ High switching speed: trr ≤ 50 ns „ Low leakage.

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BAV102; BAV103 Single general-purpose switching diodes Rev. 4 — 6 August 2010 Product data sheet 1. Product profile 1.1 General description Single general-purpose switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. Table 1. Product overview Type number Package NXP BAV102 SOD80C BAV103 JEITA - Configuration single 1.2 Features and benefits „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Low capacitance: Cd ≤ 5 pF „ Small hermetically sealed glass SMD package 1.3 Applications „ High-speed switching „ General-purpose switching „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2. Symbol IF VR trr Quick reference data Parameter forward current reverse voltage BAV102 BAV103 reverse recovery time Conditions Min Typ Max Unit [1][2] - - 250 mA - - 150 V - - 200 V [3] - - 50 ns [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes 2. Pinning information Table 3. Pin 1 2 Pinning Description cathode anode [1] The marking band indicates the cathode. 3. Ordering information Simplified outline [1] ka Graphic symbol 12 006aab040 Table 4. Ordering information Type number Package Name Description BAV102 BAV103 - hermetically sealed glass surface-mounted package; 2 connectors Version SOD80C 4. Marking Table 5. Marking codes Type number BAV102 BAV103 Marking code marking band marking band 5. Limiting values BAV102_BAV103 Product data sheet Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VRRM repetitive peak reverse voltage BAV102 - BAV103 - VR reverse voltage BAV102 - BAV103 - IF forward current IFRM repetitive peak forward current [1][2] - IFSM non-repetitive peak square wave forward current tp = 1 μs tp = 100 μs tp = 1 s [3] - All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2010 Max Unit 200 V 250 V 150 V 200 V 250 mA 625 mA 9A 3A 1A © NXP B.V. 2010. All rights reserved. 2 of 11 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [2] −65 −65 Max 400 175 +175 +175 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Tj = 25 °C prior to surge. 6. Thermal characteristics Unit mW °C °C °C Table 7. Symbol Rth(j-a) Rth(j-t) Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to tie-point Min Typ Max Unit [1] - - 375 K/W - - 300 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VF forward voltage IF = 100 mA IF = 200 mA IR reverse current BAV102 VR = 150 V VR = 150 V; Tj = 150 °C BAV103 VR = 200 V VR = 200 V; Tj = 150 °C Cd diode capacitance f = 1 MHz; VR = 0 V trr reverse recovery time Min [1] - Typ - -- -- -- -- -- [2] - - [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. Max Unit 1.0 V 1.25 V 100 nA 100 μA 100 nA 100 μA 5 pF 50 ns BAV102_BAV103 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 11 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes 600 IF (mA) 400 200 mbg459 (1) (2) (3) 102 IFSM (A) 10 1 mbg703 0 0 1 VF (V) 2 (1) Tamb = 150 °C; typical values (2) Tamb = 25 °C; typical values (3) Tamb = 25 °C; maximum values Fig 1. Forward current as a function of forward voltage 103 IR (μA) 102 mgd009 10 1 10−1 10−2 0 100 Tj (°C) 200 Fig 3. VR = VRmax Solid line: maximum values Dotted line: typical values Reverse current as a function of junction temperature 10−1 1 10 102 103 104 tp (μs) Based on square wave currents. Tj = 25 °C; prior to surge Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values 1.6 Cd (pF) 1.4 mgd005 1.2 1.0 0.8 0 10 f = 1 MHz; Tamb = 25 °C VR (V) 20 Fig 4. Diode capacitance as a function of reverse voltage; typical values BAV102_BAV103 Product data sheet All information provided in this document is subject to legal disclaimers. .


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