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BAV103 Dataheets PDF



Part Number BAV103
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon Epitaxial Planar Diodes
Datasheet BAV103 DatasheetBAV103 Datasheet (PDF)

www.vishay.com BAV100, BAV101, BAV102, BAV103 Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13".

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www.vishay.com BAV100, BAV101, BAV102, BAV103 Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purposes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION BAV100 BAV101 BAV102 BAV103 VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V ORDERING CODE BAV100-GS18 or BAV100-GS08 BAV101-GS18 or BAV101-GS08 BAV102-GS18 or BAV102-GS08 BAV103-GS18 or BAV103-GS08 TYPE MARKING - CIRCUIT CONFIGURATION Single Single Single Single REMARKS Tape and reel Tape and reel Tape and reel Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Power dissipation tp = 1 s BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 VRRM VRRM VRRM VRRM VR VR VR VR IFSM IFRM IF Ptot VALUE 60 120 200 250 50 100 150 200 1 625 250 500 UNIT V V V V V V V V A mA mA mW Rev. 1.8, 12-Jul-17 1 Document Number: 85542 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV100, BAV101, BAV102, BAV103 Vishay Semiconductors THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to lead Thermal resistance junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJL RthJA Junction temperature Tj Storage temperature range Tstg VALUE 350 500 175 -65 to +175 UNIT K/W K/W °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Forward voltage IF = 100 mA VR = 50 V VF BAV100 IR Reverse current VR = 100 V BAV101 IR VR = 150 V BAV102 IR VR = 200 V BAV103 IR Tj = 100 °C, VR = 50 V BAV100 IR Tj = 100 °C, VR = 100 V BAV101 IR Tj = 100 °C, VR = 150 V BAV102 IR Tj = 100 °C, VR = 200 V BAV103 IR IR = 100 μA, tp/T = 0.01, tp = 0.3 ms BAV100 V(BR) 60 Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms BAV101 V(BR) 120 IR = 100 μA, tp/T = 0.01, BAV102 V(BR) 200 tp = 0.3 ms BAV103 V(BR) 250 Diode capacitance VR = 0 V, f = 1 MHz, VHF = 50 mV CD Differential forward current IF = 10 mA rf Reverse recovery time IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω trr TYP. 1.5 5 MAX. 1 100 100 100 100 1.


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