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BAV100, BAV101, BAV102, BAV103
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • General purposes
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE DIFFERENTIATION
BAV100 BAV101 BAV102 BAV103
VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V
ORDERING CODE
BAV100-GS18 or BAV100-GS08 BAV101-GS18 or BAV101-GS08 BAV102-GS18 or BAV102-GS08 BAV103-GS18 or BAV103-GS08
TYPE MARKING
-
CIRCUIT CONFIGURATION
Single Single Single Single
REMARKS
Tape and reel Tape and reel Tape and reel Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current Repetitive peak forward current Forward continuous current Power dissipation
tp = 1 s
BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103
VRRM VRRM VRRM VRRM
VR VR VR VR IFSM IFRM IF Ptot
VALUE 60 120 200 250 50 100 150 200 1 625 250 500
UNIT V V V V V V V V A mA mA
mW
Rev. 1.8, 12-Jul-17
1
Document Number: 85542
For technical questions within your region:
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV100, BAV101, BAV102, BAV103
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to lead Thermal resistance junction to ambient air
On PC board 50 mm x 50 mm x 1.6 mm
RthJL RthJA
Junction temperature
Tj
Storage temperature range
Tstg
VALUE 350
500
175 -65 to +175
UNIT K/W
K/W
°C °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
IF = 100 mA VR = 50 V
VF
BAV100
IR
Reverse current
VR = 100 V
BAV101
IR
VR = 150 V
BAV102
IR
VR = 200 V
BAV103
IR
Tj = 100 °C, VR = 50 V
BAV100
IR
Tj = 100 °C, VR = 100 V
BAV101
IR
Tj = 100 °C, VR = 150 V
BAV102
IR
Tj = 100 °C, VR = 200 V
BAV103
IR
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
BAV100
V(BR)
60
Breakdown voltage
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
BAV101
V(BR)
120
IR = 100 μA, tp/T = 0.01,
BAV102
V(BR)
200
tp = 0.3 ms
BAV103
V(BR)
250
Diode capacitance
VR = 0 V, f = 1 MHz, VHF = 50 mV
CD
Differential forward current
IF = 10 mA
rf
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω
trr
TYP.
1.5 5
MAX. 1
100 100 100 100 1.