Low-leakage double diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV170 Low-leakage double diode
Product data sheet Supersedes ...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV170 Low-leakage double diode
Product data sheet Supersedes data of 1999 May 11
2003 Mar 25
NXP Semiconductors
Low-leakage double diode
Product data sheet
BAV170
FEATURES
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage:
max. 75 V Repetitive peak reverse voltage:
max. 85 V Repetitive peak forward current:
max. 500 mA.
DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration.
PINNING
PIN 1 2 3
DESCRIPTION anode anode common cathode
APPLICATION
Low-leakage current applications in surface mounted circuits.
MARKING
TYPE NUMBER BAV170
MARKING CODE(1)
JX*
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China.
handbook, 4 columns
2
1
Top view
3
21 3
MAM108
Fig.1 Simplified outline (SOT23) and symbol.
2003 Mar 25
2
NXP Semiconductors
Low-leakage double diode
Product data sheet
BAV170
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode VRRM VR IF
IFRM IFSM
Ptot Tstg Tj
repetitive peak reverse voltage continuous reverse voltage continuous forward current
repetitive peak forward current non-repetitive peak forward current
total power dissipation storage temperature junction temperature
single diode loaded; note 1; see Fig.2 double diode loaded; n...
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