BAV199W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product specification Supersedes data of 1998 Jan 09 1999 May 11 Philips Semiconductors Product specification Low-leakage double diode FEATURES Small plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. Marking code: JY- = made in Hong Kong; JYt = made in Malaysia. 1 Top view 2 MAM391 BAV199W PINNING PIN 1 2 3 anode cathode cathode; anode DESCRIPTION handbook, halfpage 3 3 1 2 Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − − single diode loaded; Ts = 90 °C; see Fig.2 − − square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj total power dissipation storage temperature junction temperature single diode loaded; Ts = 90 °C double diode loaded; Ts = 90 °C − − − − − −65 − 4 1 0.5 150 240 +150 150 A A A mW mW °C °C double diode loaded; Ts = 90 °C; see Fig.2 − IFRM IFSM repetitive peak forward current non-repetitive peak forward current MAX. UNIT ...