BAV23S

BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP BAV23A SOT23 BAV23C SOT23 BAV23S SOT23 BAV23 SOT143B JEDEC TO-236AB TO-236AB TO-236AB - Configuration dual common anode dual common cathode dual series dual isolated 1.2 Features and benefits  High switching speed: trr  50 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  250 V  Low capacitance: Cd  2 pF  Small SMD plastic package 1.3 Applications  High-speed switching at high voltage  High-voltage general-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 200 V Min Typ [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 100 200 50 Unit nA V ns NXP Semiconductors 2. Pinning information Table 3. Pin BAV23A 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode BAV23C 1 2 3 anode (diode 1) anode (diode 2) common cathode BAV23S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) BAV23 1 2 3 4 cathode (diode 1) cathode (diode 2) anode (diode 2) anode (diode 1) BAV23 series Dual high-voltage switching diodes Simplified ou...