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BAV70U

Infineon Technologies AG

Silicon Switching Diode

Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orienta...


Infineon Technologies AG

BAV70U

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Silicon Switching Diode For high-speed switching applications Common cathode configuration BAV70S / U: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BAV70... BAV70 BAV70W ! , ,  BAV70S BAV70U $# " , ,  ,! ," ! Type BAV70 BAV70S BAV70U BAV70W Package SOT23 SOT363 SC74 SOT323 Configuration common cathode double common cathode double common cathode common cathode 1Pb-containing package may be available upon special request Marking A4s A4s A4s A4s 1 2007-09-19 BAV70... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t = 1 ms t = 1 s single t = 1 s double Value 80 85 200 4.5 1 0.5 0.75 Total power dissipation BAV70, TS ≤ 33°C BAV70S, TS ≤ 85°C BAV70U, TS ≤ 90°C BAV70W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 ... 150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV70... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 85 - -V Reverse current VR...




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