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BAV70WT1

ON Semiconductor

Dual Switching Diode

www.DataSheet4U.com BAV70WT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Package is Avail...


ON Semiconductor

BAV70WT1

File Download Download BAV70WT1 Datasheet


Description
www.DataSheet4U.com BAV70WT1 Preferred Device Dual Switching Diode Common Cathode Features Pb−Free Package is Available http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 CATHODE MARKING DIAGRAM 3 3 SOT−323 CASE 419 STYLE 5 2 1 2 A4 MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW A4 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.6 RqJA PD 625 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W mW mW/°C °C/W °C ORDERING INFORMATION Device BAV70WT1 BAV70WT1G Package SOT−323 SOT−323 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please re...




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