BAV74

www.DataSheet4U.com BAV74 Silicon Switching Diode Array
For high-speed switching applications
Common cathode 3 2 1 3 1 2 EHA07004 VPS05161 Type BAV74 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking JAs 1 = A1 Pin Configuration 2 = A2 3 = C1/2 Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 50 50 200 4.5 250 150 -65 ... 150 Unit V mA A mW °C Surge forward current, t = 1
s Total power dissipation, TS = 35 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS
460 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BAV74 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 1mA IF = 10 mA, IR = 10 mA, RL = 100
, trr 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max. Unit V µA pF ns Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C
1pF 2 Jul-31-2001 BAV74 Forward current IF = f (TS ) Reverse current IR = f (TA) 220 mA 10 5 nA BAV 74 EHB00070 180 160 ΙR 10 4 5 max. VR = 70 V IF 140 120 100 80 60 40 2...