BAV74LT1

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by BAV74LT1/D Monolithic Dual Switching Diode ANODE 1 3 CATHODE 2 ANODE BAV74LT1 3 1 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 50 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 9 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BAV74LT1 = JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5.0 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω) 1. FR– 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. V(BR) IR — — CD VF trr — — — 100 0.1 2.0 1.0 4.0 pF Vdc ns 50 — Vdc µAdc Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device ...