BAV99LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAV99LT1/D Dual Series Switching Diode BAV99LT1 Motorola Preferred Device 3 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 A Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.0 1.0 0.5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A CASE 318 – 08, STYLE 11 SOT– 23 (TO – 236AB) ANODE 1 3 CATHODE/ANODE CATHODE 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BAV99LT1 = A7 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Transistors, FETs and Diodes Device Data © Motorola, Small–Signal Inc. 1996 1 BAV99LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) (EACH DIODE) Cha...