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BAV99LT1

ON Semiconductor

Monolithic Dual Switching Diode

BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MA...


ON Semiconductor

BAV99LT1

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BAV99LT1 Preferred Device Dual Series Switching Diode Features Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS (Each Diode) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.0 1.0 0.5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A ANODE 1 CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 SOT−23 STYLE 11 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −65 to +150 Unit mW mW/°C °C/W mW A7 M A7 = Device Code M = Date Code ORDERING INFORMATION mW/°C °C/W °C Device BAV99LT1 BAV99LT1G BAV99LT3 BAV99LT3G Package SOT−23 ...




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