BAV99S

Silicon Switching Diode For high-speed switching applications Series pair configuration BAV99S / U: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BAV99 BAV99W ! , ,  BAV99S BAV99U $# " , ,  ,! ," ! Type BAV99 BAV99S BAV99U BAV99W Package SOT23 SOT363 SC74 SOT323 Configuration series dual series dual series series 1Pb-containing package may be available upon special request BAV99... Marking A7s A7s A7s A7s 1 2007-09-19 BAV99... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t = 1 ms t = 1 s, single t = 1 s, double Value 80 85 200 4.5 1 0.5 0.75 Total power dissipation BAV99, TS ≤ 28°C BAV99S, TS ≤ 85°C BAV99U, TS ≤ 113°C BAV99W, TS ≤ 110°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAV99 BAV99S BAV99U BAV99W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value ≤ 360 ≤ 260 ≤ 150 ≤ 160 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV99... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 85 - -V Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 7...