AT28BV16

AT28BV16 Features 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges 16K (2K x 8) Battery-Voltage™ CMOS E2PROM Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched (continued) Pin Configurations Pin Name A0 - A10 CE OE WE I/O0 - I/O7 NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect Don’t Connect TSOP Top View AT28BV16 PDIP, SOIC Top View PLCC Top View 0308A 2-119 Description (Continued) internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control ti...