AT28BV256

Features Single 2.7V - 3.6V Supply Fast Read Access Time – 200 ns Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1- to 64-byte Page Write Operation Low Power Dissipation – 15 mA Active Current – 20 µA CMOS Standby Current Hardware and Software Data Protection Data Polling for End of Write Detection High Reliability CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years JEDEC Approved Byte-wide Pinout Industrial Temperature Ranges Green (Pb/Halide-free) Packaging Option Only 256K (32K x 8) Battery-Voltage Parallel EEPROMs AT28BV256 1. Description The AT28BV256 is a high-performance electrically erasable and programmable readonly memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access time...